SiC材料

Silicon carbide materials

当社の貼り合わせSiC基板である「SiCkrest®」（サイクレスト）は低抵抗多結晶SiCの支持基板の上に高品質な単結晶を薄く貼り合せることによって、SiC単結晶の特性を維持しつつ、基板全体の低抵抗化と高強度化を実現しています。
SiC基板によってパワー半導体の高効率化・小型化が可能となり、HEV・BEVの燃費向上に寄与します。SiC材料部では、8インチ貼り合わせSiC基板の単結晶・多結晶研磨加工から接合までの一貫生産工程、6インチ多結晶研磨工程を有しております。

Structure of our bonded SiC substrate, "SiCkrest®", is that the thin high-quality Mono-crystal SiC onto a low-resistivity polycrystal SiC as support substrate. This structure achieves low resistance and high strength SiC substrate while maintaining the properties of Mono-crystal SiC.
SiC substrates enable higher efficiency and more compact power devises, contributing to improved fuel and electrical efficiency in HEVs and BEVs. Ohkuchi Electronics SiC Materials Department has an integrated production process for 8-inch bonded SiC substrates, from Mono-crystal SiC and Poly-crystal SiC polishing to bonding, as well as a 6-inch polycrystal polishing process.